Infineon BUZ101SL

Infineon · FETs & Power MOSFETs · MPN BUZ101SL

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Specifications

Drain to Source Voltage55V
Gate Charge(Qg)36nC@10V
Output Capacitance(Coss)215pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)70mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)700pF
TypeN-Channel

Technical details

55V 20A 2V 55W 70mΩ@4.5V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs

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