Infineon · FETs & Power MOSFETs · MPN BUZ100S
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 55V |
| Gate Charge(Qg) | 100nC@10V |
| Output Capacitance(Coss) | 770pF |
| Current - Continuous Drain(Id) | 77A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 170W |
| Reverse Transfer Capacitance (Crss@Vds) | 390pF |
| RDS(on) | 15mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.375nF |
55V 77A 4V 170W 15mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs