Infineon · FETs & Power MOSFETs · MPN BTS115AE6327
No reviews yet — be the first to review Infineon BTS115AE6327.
| Configuration | - |
|---|---|
| Gate Charge(Qg) | - |
| Drain to Source Voltage | 50V |
| Output Capacitance(Coss) | 320pF |
| Current - Continuous Drain(Id) | 15.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 120mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 735pF |
50V 15.5A 2.5V 50W 120mΩ 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS