Infineon · FETs & Power MOSFETs · MPN BSZ900N20NS3GATMA1
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 11.6nC@10V |
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 69pF |
| Current - Continuous Drain(Id) | 15.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.2pF |
| RDS(on) | 77mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 920pF |
N-Channel 200V 15.2A 62.5W Surface Mount TSDSON-8FL