Infineon · FETs & Power MOSFETs · MPN BSZ900N15NS3GATMA1
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| Drain to Source Voltage | 150V |
|---|---|
| Gate Charge(Qg) | 7nC@10V |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 38W |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF |
| RDS(on) | 90mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 510pF |
150V 13A 4V 38W 90mΩ@10V 1 N-channel TSDSON-8 Single FETs, MOSFETs RoHS