Infineon · FETs & Power MOSFETs · MPN BSZ215CH
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| Configuration | Common source |
|---|---|
| Current - Continuous Drain(Id) | 5.1A |
| RDS(on) | 95mΩ@4.5V |
| Pd - Power Dissipation | 2.5W |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Drain to Source Voltage | 20V |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 419pF |
| Gate Charge(Qg) | 4.6nC@4.5V |
| Operating Temperature | -55℃~+175℃ |
5.1A 95mΩ@4.5V 2.5W 1.4V 1 N-Channel + 1 P-Channel TSDSON-8(3.3x3.3) FET, MOSFET Arrays RoHS