Infineon · FETs & Power MOSFETs · MPN BSZ180P03NS3E G
No reviews yet — be the first to review Infineon BSZ180P03NS3E G.
| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 744pF |
| Current - Continuous Drain(Id) | 39.6A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 49pF |
| RDS(on) | 13.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.48nF |
| Type | P-Channel |
30V 39.6A 2.5V 40W 13.5mΩ@10V 1 P-Channel P-Channel TSDSON-8FL Single FETs, MOSFETs RoHS