Infineon BSZ180P03NS3 G

Infineon · FETs & Power MOSFETs · MPN BSZ180P03NS3 G

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)39.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.1V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)73.5pF
RDS(on)-
Number1 P-Channel
Input Capacitance(Ciss)2.22nF

Technical details

P-Channel 30V 39.6A 40W Surface Mount TSDSON-8FL

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