Infineon · FETs & Power MOSFETs · MPN BSZ16DN25NS3GATMA1
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| Gate Charge(Qg) | 11.4nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 10.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 62.5W |
| RDS(on) | 165mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 920pF |
N-Channel 250V 10.9A 62.5W Surface Mount TSDSON-8FL