Infineon · FETs & Power MOSFETs · MPN BSZ160N10NS3G
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| Gate Charge(Qg) | 19nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 240pF |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 2.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 16mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
| Type | N-Channel |
N-Channel 100V 8A 2.1W Surface Mount TSDSON-8(3.3x3.3)