Infineon BSZ15DC02KDHXTMA1

Infineon · FETs & Power MOSFETs · MPN BSZ15DC02KDHXTMA1

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Specifications

Current - Continuous Drain(Id)3.2A;5.1A
Pd - Power Dissipation2.5W
RDS(on)150mΩ@4.5V;55mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1V;1.1V
Drain to Source Voltage20V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)94pF;16pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)270pF;315pF
Gate Charge(Qg)3nC@4.5V;2.1nC@4.5V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)110pF;114pF

Technical details

N-Channel+P-Channel 20V 5.1A 2.5W Surface Mount TSDSON-8

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