Infineon BSZ150N10LS3G

Infineon · FETs & Power MOSFETs · MPN BSZ150N10LS3G

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Specifications

Gate Charge(Qg)35nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)370pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation63W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.5nF
TypeN-Channel

Technical details

N-Channel 100V 40A 63W Surface Mount TSDSON-8FL

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