Infineon BSZ123N08NS3G

Infineon · FETs & Power MOSFETs · MPN BSZ123N08NS3G

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)470pF
Current - Continuous Drain(Id)56A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation66W
Reverse Transfer Capacitance (Crss@Vds)470pF
RDS(on)12.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.7nF
TypeN-Channel

Technical details

N-Channel 80V 56A 66W Surface Mount TSDSON-8FL

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