Infineon BSZ110N08NS5ATMA1

Infineon · FETs & Power MOSFETs · MPN BSZ110N08NS5ATMA1

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)18.5nC@10V
Output Capacitance(Coss)235pF
Current - Continuous Drain(Id)51A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)11mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
TypeN-Channel

Technical details

N-Channel 80V 51A 50W Surface Mount TSDSON-8FL

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