Infineon BSZ105N04NSG

Infineon · FETs & Power MOSFETs · MPN BSZ105N04NSG

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Specifications

Gate Charge(Qg)17nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)440pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)10.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
TypeN-Channel

Technical details

40V 40A 4V 35W 10.5mΩ@10V 1 N-channel N-Channel TSDSON-8 Single FETs, MOSFETs RoHS

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