Infineon BSZ100N06LS3G

Infineon · FETs & Power MOSFETs · MPN BSZ100N06LS3G

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)660pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)24pF
RDS(on)17.9mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.5nF
TypeN-Channel

Technical details

N-Channel 60V 20A 50W Surface Mount TSDSON-8FL

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