Infineon BSZ100N03MSGATMA1

Infineon · FETs & Power MOSFETs · MPN BSZ100N03MSGATMA1

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)23nC@10V
Output Capacitance(Coss)590pF
Current - Continuous Drain(Id)44A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)11.4mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.7nF
TypeN-Channel

Technical details

30V 44A 2V 30W 11.4mΩ@4.5V 1 N-channel N-Channel TSDSON-8 Single FETs, MOSFETs RoHS

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