Infineon BSZ097N10NS5

Infineon · FETs & Power MOSFETs · MPN BSZ097N10NS5

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Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)39A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)9.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.08nF

Technical details

N-Channel 100V 39A 69W Surface Mount TSDSON-8FL

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