Infineon BSZ0911LSATMA1

Infineon · FETs & Power MOSFETs · MPN BSZ0911LSATMA1

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)10nC@10V
Output Capacitance(Coss)270pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)9mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)670pF
TypeN-Channel

Technical details

30V 40A 2V 9mΩ@4.5V 1 N-channel N-Channel TDSON-8FL Single FETs, MOSFETs RoHS

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