Infineon · FETs & Power MOSFETs · MPN BSZ0911LSATMA1
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 10nC@10V |
| Output Capacitance(Coss) | 270pF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 9mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 670pF |
| Type | N-Channel |
30V 40A 2V 9mΩ@4.5V 1 N-channel N-Channel TDSON-8FL Single FETs, MOSFETs RoHS