Infineon · FETs & Power MOSFETs · MPN BSZ0910ND
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| Configuration | Half-Bridge |
|---|---|
| Gate Charge(Qg) | - |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 31W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 7.7mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 590pF |
30V 25A 1.6V 31W 7.7mΩ@10V 2 N-Channel ISON-8-EP(3x3) Single FETs, MOSFETs RoHS