Infineon BSZ0910LSATMA1

Infineon · FETs & Power MOSFETs · MPN BSZ0910LSATMA1

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)17nC@10V
Output Capacitance(Coss)460pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.1W
RDS(on)5.7mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.1nF
TypeN-Channel

Technical details

N-Channel 30V 40A 2.1W Surface Mount TSDSON-8FL

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