Infineon BSZ0909NS

Infineon · FETs & Power MOSFETs · MPN BSZ0909NS

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Specifications

Configuration-
Gate Charge(Qg)13nC@10V
Drain to Source Voltage34V
Output Capacitance(Coss)340pF
Current - Continuous Drain(Id)36A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)10mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)975pF

Technical details

N-Channel 34V 36A 25W Surface Mount TSDSON-8FL

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