Infineon · FETs & Power MOSFETs · MPN BSZ0909ND
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| Gate Charge(Qg) | 1.8nC |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 1.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 18mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 360pF |
30V 20A 2V 1.9W 18mΩ@10V 2 N-Channel ISON-8-EP(3x3) Single FETs, MOSFETs RoHS