Infineon · FETs & Power MOSFETs · MPN BSZ0904NSIATMA1
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| Gate Charge(Qg) | 11nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 18A;40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 2.1W;37W |
| Reverse Transfer Capacitance (Crss@Vds) | 64pF |
| RDS(on) | 4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.463nF |
N-Channel 30V 18A 40A 2.1W 37W Surface Mount TSDSON-8