Infineon · FETs & Power MOSFETs · MPN BSZ0902NSIATMA1
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 24nC@10V |
| Output Capacitance(Coss) | 838pF |
| Current - Continuous Drain(Id) | 102A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 48W |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF |
| RDS(on) | 3.7mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.995nF |
| Type | N-Channel |
30V 102A 2V 48W 3.7mΩ@4.5V 1 N-channel N-Channel TSDSON-8 Single FETs, MOSFETs RoHS