Infineon BSZ0902NSATMA1

Infineon · FETs & Power MOSFETs · MPN BSZ0902NSATMA1

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)35nC@10V
Output Capacitance(Coss)798pF
Current - Continuous Drain(Id)106A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)88pF
RDS(on)3.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.261nF
TypeN-Channel

Technical details

N-Channel 30V 106A 48W Surface Mount TSDSON-8

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