Infineon · FETs & Power MOSFETs · MPN BSZ0901NSIATMA1
No reviews yet — be the first to review Infineon BSZ0901NSIATMA1.
| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 55nC@10V |
| Output Capacitance(Coss) | 1.33nF |
| Current - Continuous Drain(Id) | 142A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 69W |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 2.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.458nF |
| Type | N-Channel |
30V 142A 2V 69W 2.1mΩ@10V 1 N-channel N-Channel TSDSON-8 Single FETs, MOSFETs RoHS