Infineon · FETs & Power MOSFETs · MPN BSZ088N03LS G
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 35W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 7.3mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.3nF |
30V 50A 2.2V 35W 7.3mΩ@10V 1 P-Channel DFN-8(3.3x3.3) Single FETs, MOSFETs RoHS