Infineon BSZ086P03NS3G

Infineon · FETs & Power MOSFETs · MPN BSZ086P03NS3G

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Specifications

Gate Charge(Qg)57.5nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)165pF
RDS(on)8.6mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)4.785nF

Technical details

P-Channel 30V 40A 69W Surface Mount TSDSON-8FL

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