Infineon · FETs & Power MOSFETs · MPN BSZ086P03NS3EGATMA1
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 57.5nC@10V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 69W |
| Reverse Transfer Capacitance (Crss@Vds) | 165pF |
| RDS(on) | 13.4mΩ@6V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.785nF |
| Type | P-Channel |
P-Channel 30V 40A 69W Surface Mount TSDSON-8