Infineon · FETs & Power MOSFETs · MPN BSZ0704LSATMA1
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| Gate Charge(Qg) | 8.6nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 2.1W;36W |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 9.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
60V 2.3V 9.9mΩ@10V 1 N-channel TDSON-8FL Single FETs, MOSFETs RoHS