Infineon · FETs & Power MOSFETs · MPN BSZ068N06NSATMA1
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 21nC@10V |
| Output Capacitance(Coss) | 375pF |
| Current - Continuous Drain(Id) | 63A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Pd - Power Dissipation | 46W |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF |
| RDS(on) | 6.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.5nF |
| Type | N-Channel |
60V 63A 3.3V 46W 6.8mΩ@10V 1 N-channel N-Channel TSDSON-8 Single FETs, MOSFETs RoHS