Infineon BSZ0602LSATMA1

Infineon · FETs & Power MOSFETs · MPN BSZ0602LSATMA1

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)18nC@4.5V
Current - Continuous Drain(Id)13A;40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation69W
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.34nF

Technical details

80V 2.3V 69W 7mΩ@10V 1 N-channel TDSON-8FL Single FETs, MOSFETs RoHS

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