Infineon BSZ058N03LS G

Infineon · FETs & Power MOSFETs · MPN BSZ058N03LS G

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage30V
Current - Continuous Drain(Id)71A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)36pF
RDS(on)4.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.8nF

Technical details

30V 71A 2.2V 45W 4.8mΩ@10V 1 N-channel DFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

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