Infineon BSZ050N03MSG

Infineon · FETs & Power MOSFETs · MPN BSZ050N03MSG

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Specifications

Gate Charge(Qg)46nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)1.1nF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation48W
RDS(on)5.7mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.6nF
TypeN-Channel

Technical details

30V 40A 2V 48W 5.7mΩ@4.5V 1 N-channel N-Channel TSDSON-8(3.3x3.3) Single FETs, MOSFETs RoHS

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