Infineon BSZ050N03LSG

Infineon · FETs & Power MOSFETs · MPN BSZ050N03LSG

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Specifications

Gate Charge(Qg)35nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)1.1nF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.8nF
TypeN-Channel

Technical details

30V 40A 2.2V 50W 5mΩ@10V 1 N-channel N-Channel TSDSON-8(3.3x3.3) Single FETs, MOSFETs RoHS

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