Infineon BSZ0506NSATMA1

Infineon · FETs & Power MOSFETs · MPN BSZ0506NSATMA1

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)61A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.1W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)4.4mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)950pF

Technical details

N-Channel 30V 61A 2.1W Surface Mount TSDSON-8FL

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