Infineon BSZ0503NSIATMA1

Infineon · FETs & Power MOSFETs · MPN BSZ0503NSIATMA1

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Specifications

Gate Charge(Qg)9.5nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)450pF
Current - Continuous Drain(Id)82A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation36W
Reverse Transfer Capacitance (Crss@Vds)36pF
RDS(on)4.2mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
TypeN-Channel

Technical details

N-Channel 30V 82A 36W Surface Mount TSDSON-8

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