Infineon · FETs & Power MOSFETs · MPN BSZ0502NSI
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 43W |
| Reverse Transfer Capacitance (Crss@Vds) | 44pF |
| RDS(on) | 2.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.2nF |
30V 100A 2V 43W 2.4mΩ@10V 1 N-channel TSDSON-8(3.3x3.3) Single FETs, MOSFETs RoHS