Infineon BSZ0501NSIATMA1

Infineon · FETs & Power MOSFETs · MPN BSZ0501NSIATMA1

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Specifications

Gate Charge(Qg)11.4nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)730pF
Current - Continuous Drain(Id)123A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)36pF
RDS(on)2.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2nF
TypeN-Channel

Technical details

N-Channel 30V 123A 50W Surface Mount TSDSON-8FL

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