Infineon · FETs & Power MOSFETs · MPN BSZ042N04NSG
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| Gate Charge(Qg) | 46nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 1.1nF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 69W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 4.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.7nF |
| Type | N-Channel |
40V 40A 4V 69W 4.2mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS