Infineon · FETs & Power MOSFETs · MPN BSZ039N06NS
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| Gate Charge(Qg) | 27nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 2.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 44pF |
| RDS(on) | 3.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.5nF |
60V 40A 2.1W 3.9mΩ@10V 1 N-channel TSDSON-8(3.3x3.3) Single FETs, MOSFETs RoHS