Infineon · FETs & Power MOSFETs · MPN BSZ036NE2LSATMA1
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| Drain to Source Voltage | 25V |
|---|---|
| Gate Charge(Qg) | 10nC@12V |
| Current - Continuous Drain(Id) | 79A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 2.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 51pF |
| RDS(on) | 3.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.596nF |
N-Channel 25V 79A 2.1W Surface Mount TSDSON-8