Infineon BSZ035N03LS G

Infineon · FETs & Power MOSFETs · MPN BSZ035N03LS G

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Specifications

Gate Charge(Qg)27nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)67pF
RDS(on)3.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.4nF

Technical details

30V 40A 2.2V 69W 3.5mΩ@10V 1 N-channel TSDSON-8(3.3x3.3) Single FETs, MOSFETs RoHS

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