Infineon BSZ019N03LS

Infineon · FETs & Power MOSFETs · MPN BSZ019N03LS

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)44nC
Current - Continuous Drain(Id)149A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.1W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)1.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.8nF

Technical details

N-Channel 30V 149A 2.1W Surface Mount TSDSON-8

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