Infineon · FETs & Power MOSFETs · MPN BSZ018NE2LSI
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| Gate Charge(Qg) | 36nC |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 69W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 1.8mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.325nF |
25V 40A 2V 69W 1.8mΩ@4.5V 1 N-channel TSDSON-8(3.3x3.3) Single FETs, MOSFETs RoHS