Infineon BSZ018NE2LSATMA1

Infineon · FETs & Power MOSFETs · MPN BSZ018NE2LSATMA1

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)52nC@10V
Output Capacitance(Coss)1.33nF
Current - Continuous Drain(Id)153A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)2.4mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.724nF
TypeN-Channel

Technical details

N-Channel 25V 153A 69W Surface Mount TSDSON-8FL

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