Infineon BSZ009NE2LS5

Infineon · FETs & Power MOSFETs · MPN BSZ009NE2LS5

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Specifications

Gate Charge(Qg)92nC@10V
Drain to Source Voltage25V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)1.1nF
RDS(on)0.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.5nF

Technical details

25V 40A 1.2V 69W 0.9mΩ@10V 1 N-channel TSDSON-8(3.3x3.3) Single FETs, MOSFETs RoHS

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