Infineon BSV236SPH6327

Infineon · FETs & Power MOSFETs · MPN BSV236SPH6327

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Specifications

Gate Charge(Qg)5.7nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)92pF
Current - Continuous Drain(Id)1.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation560mW
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)175mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)228pF
TypeP-Channel

Technical details

P-Channel 20V 1.5A 0.56W Surface Mount SOT-363

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