Infineon BSS84PWH6327

Infineon · FETs & Power MOSFETs · MPN BSS84PWH6327

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Specifications

Gate Charge(Qg)1.5nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)7.3pF
Current - Continuous Drain(Id)150mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation300mW
Reverse Transfer Capacitance (Crss@Vds)3.8pF
RDS(on)8Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)19.1pF
TypeP-Channel

Technical details

P-Channel 60V 0.15A 0.3W Surface Mount SOT-323

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